FDY2000PZ

Name: FDY2000PZ
Brand: ON Semiconductor
SKU: FDY2000PZ
Price: 0.16000 USD
Availability: InStock

new-10%

Manufacturer part number:FDY2000PZ

Manufacturer:ON Semiconductor

Description:FDY2000PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDY2000PZ Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 22 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Weight	32mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	625mW
Terminal Form	FLAT
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	630mW
Turn On Delay Time	6 ns
Power - Max	446mW
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	1.2 Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	350mA
Threshold Voltage	-1.03V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.35A
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	600μm
Length	1.7mm
Width	1.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free