Name: FDW254P
Brand: ON Semiconductor
SKU: FDW254P
Availability: InStock

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FDW254P

Manufacturer part number:FDW254P

Manufacturer:ON Semiconductor

Description:FDW254P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDW254P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173, 4.40mm Width)
Number of Pins	8
Supplier Device Package	8-TSSOP
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	12MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Current Rating	-9.2A
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Power Dissipation	1.3W
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5878pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9.2A Ta
Gate Charge (Qg) (Max) @ Vgs	96nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	210 ns
Continuous Drain Current (ID)	9.2A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Input Capacitance	5.878nF
Drain to Source Resistance	12mOhm
Rds On Max	12 mΩ
Height	1mm
Length	3mm
Width	4.4mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FDW254P Product Details

FDW254P Description

FDW254P is a kind of P-channel 1.8 V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench process for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).