STP160N4LF6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STP160N4LF6 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
DeepGATE™, STripFET™ VI
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP160
Configuration
Single
Power Dissipation-Max
150W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.9m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds
8130pF @ 20V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
181nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
120A
RoHS Status
ROHS3 Compliant
In-Stock:2511 items
STP160N4LF6 Product Details
STP160N4LF6 Description
STP160N4LF6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 40V. This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages.
STP160N4LF6 Features
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Logic level drive
High avalanche ruggedness
100% avalanche tested
STP160N4LF6 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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