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FDV305N

FDV305N

FDV305N

ON Semiconductor

FDV305N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDV305N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2003
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 220MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating900mA
Number of Elements 1
Power Dissipation-Max 350mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation350mW
Turn On Delay Time4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 900mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 109pF @ 10V
Current - Continuous Drain (Id) @ 25°C 900mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Rise Time7ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 8 ns
Continuous Drain Current (ID) 900mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:20592 items

Pricing & Ordering

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FDV305N Product Details

FDV305N Description


The FDV305N is a high-voltage N-channel MOSFET that uses the PowerTrench? technology. It was designed with a load switch and battery protection in mind. The PowerTrench technology is used in this 20V N-Channel MOSFET. It has been designed with power management in mind.



FDV305N Features


  • Low gate charge

  • Fast switching speed

  • High performance trench technology for extremely low RDS (ON)



FDV305N Applications


  • This product is general usage and suitable for many different applications.

  • Load Switch

  • Battery Protection

  • Power Management


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