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FDV302P-NB8V001

FDV302P-NB8V001

FDV302P-NB8V001

ON Semiconductor

MOSFET Digital FET P-Ch

SOT-23

FDV302P-NB8V001 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingDigi-Reel®
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 350mW Ta
Element ConfigurationSingle
Power Dissipation350mW
Turn On Delay Time5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V
Rise Time8ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 120mA
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1262 items

About FDV302P-NB8V001

The FDV302P-NB8V001 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET Digital FET P-Ch.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDV302P-NB8V001, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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