IPD90P04P405ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IPD90P04P405ATMA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Published
2010
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
125W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
3 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
4.7m Ω @ 90A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
10300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
90A Tc
Gate Charge (Qg) (Max) @ Vgs
154nC @ 10V
Rise Time
8ns
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
7 ns
Continuous Drain Current (ID)
90A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-40V
Drain-source On Resistance-Max
0.0047Ohm
Avalanche Energy Rating (Eas)
60 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
In-Stock:2668 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.058651
$5.058651
10
$4.772312
$47.72312
100
$4.502181
$450.2181
500
$4.247341
$2123.6705
1000
$4.006925
$4006.925
IPD90P04P405ATMA1 Product Details
IPD90P04P405ATMA1 Description
IPD90P04P405ATMA1 is an OptiMOS?-P2 Power-Transistor. The Infineon IPD90P04P405ATMA1 can be applied in High-Side MOSFETs for motor bridges due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IPD90P04P405ATMA1 is in the TO-252-3 package with 125W power dissipation.
IPD90P04P405ATMA1 Features
P-channel - Normal Level - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
IPD90P04P405ATMA1 Applications
High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
Bridge configuration could be realized with a 40V P-Channel as high side device with no need for a charge pump
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