FDS8958B Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8958B Features
Q1 N-Channel
Max. RDS(on) = 26 m|? at VGS = 10 V, ID = 6.4 A
Max. RDS(on) = 39 m|? at VGS = 4.5 V, ID = 5.2 A
Q2 P-Channel
Max. RDS(on) = 51 m|? at VGS = -10 V, ID = -4.5 A
Max. RDS(on) = 80 m|? at VGS = -4.5 V, ID = -3.3 A
HBM ESD protection level > 3.5 kV
RoHS Compliant
FDS8958B Applications
This product is general usage and suitable for many different applications.
DC-DC Conversion
BLU and Motor Drive Inverter
