FDS6892A Description
These N-channel logic level MOSFET are manufactured using an advanced PowerTrress process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS6892A Features
7.5 A, 20 V
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 24 mΩ @ VGS = 2.5 V
Low gate charge
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6892A Applications
This product is general usage and suitable for many different applications.
