FDS8928A Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using proprietary high cell density DMOS technology. This high-density process is specially tailored to minimize on-resistance and provide excellent switching performance. These devices are particularly suitable for low-voltage applications, such as laptop power management and other battery-powered circuits, which require fast switching, low series power loss and anti-transient.
FDS8928A Features
N-Channel
5.5A, 30V
Max. RDS(on) = 30 mΩ at VGS = 4.5 V,
Max. RDS(on) = 38 mΩ at VGS = 2.5 V
P-Channel
-4A, -20V
Max. RDS(on) = 55 mΩ at VGS = -4.5 V
Max. RDS(on) = 72 mΩ at VGS = -2.5 V
High density cell design for extremely low RDS(ON)
High power and current handling capability in a widely used surface mount package
Dual (N & P-Channel) MOSFET in surface mount package
Applications
This product is general usage and suitable for many different applications.
