FDMS3602S Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
FDMS3602S Features
Q1: N-Channel
Max RDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A
Max RDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A
Q2: N-Channel
Max RDS(on) = 2.2 mΩ at VGS = 10 V, ID= 26 A
Max RDS(on) = 3.4 mΩ at VGS = 4.5 V, ID = 22 A
Low-inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDMS3602S Applications
This product is general usage and suitable for many different applications.
