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FDS7064N7

FDS7064N7

FDS7064N7

ON Semiconductor

FDS7064N7 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS7064N7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SO
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 16.5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3355pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16.5A Ta
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
In-Stock:2549 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.166351$0.166351
10$0.156935$1.56935
100$0.148052$14.8052
500$0.139671$69.8355
1000$0.131765$131.765

FDS7064N7 Product Details

FDS7064N7 Description

FDS7064N7 N-Channel MOSFET was created with a distinctive PowerTrench technology that provides the most efficient RDS(on) together with an optimized BVDSS capability. FDS7064N7 MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDS7064N7 ON Semiconductor is a general-purpose device and can be used in a variety of applications.

FDS7064N7 Features

Extended VGSS range for battery applications

High performance trench technology

High power and current handling capability

RoHS compliant

FDS7064N7 Applications

Control Switch

Synchronous & Non-Synchronous Buck

Load Switch

Inverter


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