Name: HAT2168HWS-E
Brand: Renesas Electronics America
SKU: HAT2168HWS-E
Availability: InStock

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HAT2168HWS-E

Manufacturer part number:HAT2168HWS-E

Manufacturer:Renesas Electronics America

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.9m Ω @ 15A, 10V ±20V 1730pF @ 10V 11nC @ 4.5V 30V SC-100, SOT-669

Case Package:SOT-23

Datasheet:HAT2168HWS-E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	15W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1730pF @ 10V
Current - Continuous Drain (Id) @ 25°C	30A Ta
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	Non-RoHS Compliant

HAT2168HWS-E Product Details

HAT2168HWS-E Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1730pF @ 10V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.