Name: FDS6900AS
Brand: ON Semiconductor
SKU: FDS6900AS
Price: 0.55000 USD
Availability: InStock

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FDS6900AS

Manufacturer part number:FDS6900AS

Manufacturer:ON Semiconductor

Description:MOSFET Dual NCh PowerTrench

Case Package:SOT-23

Datasheet:FDS6900AS Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®, SyncFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	27MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	2W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	8.2A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Power - Max	900mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6.9A 8.2A
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	4ns
Fall Time (Typ)	3 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	8.2A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6.9A
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.9 V
Height	1.5mm
Length	5mm
Width	3.99mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDS6900AS Product Details

The ON Semiconductor FDS6900AS is a dual N-channel PowerTrench® MOSFET array designed for high-current, low-voltage applications. This device features a low on-resistance of 0.0045 ohms and a maximum drain-source voltage of 30V. It is capable of handling up to 8A of continuous drain current and up to 16A of pulsed drain current. The FDS6900AS is ideal for use in power management, motor control, and other high-current applications. It is RoHS compliant and halogen-free, making it an environmentally friendly choice. The FDS6900AS is available in a variety of packages, including the SO-8, D2PAK, and DPAK.