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SSM6N56FE,LM

SSM6N56FE,LM

SSM6N56FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.8A

SOT-23

SSM6N56FE,LM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2014
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation150mW
Power - Max 150mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 235mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 55pF @ 10V
Current - Continuous Drain (Id) @ 25°C 800mA
Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 800mA
Input Capacitance55pF
FET Feature Logic Level Gate, 1.5V Drive
Rds On Max 235 mΩ
RoHS StatusRoHS Compliant
In-Stock:13681 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SSM6N56FE,LM

The SSM6N56FE,LM from Toshiba Semiconductor and Storage is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 2N-CH 20V 0.8A.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SSM6N56FE,LM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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