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FDS5682

FDS5682

FDS5682

ON Semiconductor

FDS5682 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS5682 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2001
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 21mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.5A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:2224 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.384069$0.384069
10$0.362329$3.62329
100$0.341820$34.182
500$0.322472$161.236
1000$0.304218$304.218

FDS5682 Product Details

FDS5682 Description


The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS and fast switching speed.


FDS5682 Features


? rDS(ON) = 21m?, VGS = 10V, ID = 7.5A

? rDS(ON) = 26.5m?, VGS = 4.5V, ID = 6.7A

? High performance trench technology for extremely low

rDS(ON)

? Low gate charge

? High power and current handling capability


FDS5682 Applications


? DC/DC converters


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