FQA85N06 Description
Using Fairchild's unique, planar stripe, DMOS technology, N-Channel enhancement mode power field effect transistors are made in the FQA85N06 configuration. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. Low voltage applications including automotive, DC/DC converters, and high efficiency switching for power management in portable and battery-operated goods are ideally suited for FQA85N06.
FQA85N06 Features
Fast switching
100% avalanche tested
Low Crss ( typical 165 pF)
Improved dv/dt capability
Low gate charge ( typical 86 nC)
100A, 60V, RDS(on) = 0.010? @VGS = 10 V
175°C maximum junction temperature rating
FQA85N06 Applications
Industrial
Enterprise systems
Personal electronics
