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FDP2532

FDP2532

FDP2532

ON Semiconductor

FDP2532 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDP2532 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 16MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating79A
Number of Elements 1
Power Dissipation-Max 310W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation310W
Case Connection DRAIN
Turn On Delay Time16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Rise Time30ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 79A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 400 mJ
Recovery Time 105 ns
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1920 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.95000$3.95
10$3.54300$35.43
100$2.92610$292.61
800$2.17118$1736.944

FDP2532 Product Details

FDP2532 Description


The FDP2532 is a PowerTrench? N-channel MOSFET suitable for synchronous rectification, battery protection circuit, uninterruptible power supplies and micro solar inverter. The general purpose MOSFET portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs as well as products for smaller power handling (single and dual N- and P-channel MOSFETs).



FDP2532 Features


  • RDS(on) = 14 mΩ ( Typ.) @VGS = 10 V, lD = 33 A

  • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V

  • Low Miller Charge

  • Low Qrr Body Diode

  • UIS Capability (Single Pulse and Repetitive Pulse)

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



FDP2532 Applications


  • Consumer Appliances

  • Synchronous Rectification

  • Battery Protection Circuit

  • Motor drives and Uninterruptible Power Supplies

  • Micro Solar Inverter

  • Power Management


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