Name: FDP20N50F
Brand: ON Semiconductor
SKU: FDP20N50F
Price: 3.26000 USD
Availability: InStock

new-10%

FDP20N50F

Manufacturer part number:FDP20N50F

Manufacturer:ON Semiconductor

Description:FDP20N50F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP20N50F Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	UniFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3390pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	120ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.26Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	80A
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

FDP20N50F Product Details

FDP20N50F Description

N-channel UniFET? MOSFET FDP20N50F belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, better switching performance, and higher avalanche energy strength. Due to its reliable performance, it is able to provide considerable benefits for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.