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NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

NVD5117PLT4G-VF01

ON Semiconductor

NVD5117PLT4G-VF01 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NVD5117PLT4G-VF01 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 4.1W Ta 118W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 16m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Ta 61A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.022Ohm
Pulsed Drain Current-Max (IDM) 419A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 240 mJ
RoHS StatusROHS3 Compliant
In-Stock:2293 items

Pricing & Ordering

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NVD5117PLT4G-VF01 Product Details

NVD5117PLT4G-VF01 Description


In the United States and/or other countries, onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries. Onsemi retains the right to modify any of the goods listed without additional notice. Onsemi specifically disclaims any and all liability, including without limitation special, consequential, or incidental damages, regarding the suitability of its products for any particular purpose. Onsemi also does not assume any liability arising out of the application or use of any product or circuit. Onsemi neither grants any licenses under its own patent rights nor those of third parties.



NVD5117PLT4G-VF01 Features


Low RDS(on) to Minimize Conduction Losses

High Current Capability

Avalanche Energy Specified

AEC−Q101 Qualified

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant



NVD5117PLT4G-VF01 Applications


Temperature Measurement

Pressure Measurement

Flow Meters

Factory Automation and Process Control


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