Description
Explicitly designed to reduce on-state resistance and maintain a low gate charge for the best switching performance, the FDN5630 is a 60V N-channel PowerTrench? MOSFET. The newest medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small reverse recovery charge, and a small gate charge to provide quick switching for synchronous rectification in AC/DC power supply. It makes use of shielded-gate technology to maintain charge balance. These devices' FOM (figure of merit (QGxRDS(ON))) is 66 percent lower than that of earlier generations thanks to the use of this cutting-edge technology. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET eliminates snubber circuits or replaces higher voltage ratings - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
Low gate charge
High-speed switching
SuperSOTTM - 3 provides low RDS(ON) in SOT23 footprint
1.7 A, 60 V. RDS(ON) = 0.100 ? @ VGS = 10 V
RDS(ON) = 0.120 ? @ VGS = 6 V
Optimized for use in high frequency DC/DC converters
Applications
