FDN361AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDN361AN Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
1.8A
Number of Elements
1
Power Dissipation-Max
500mW Ta
Element Configuration
Single
Power Dissipation
500mW
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
100m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
220pF @ 15V
Current - Continuous Drain (Id) @ 25°C
1.8A Ta
Gate Charge (Qg) (Max) @ Vgs
4nC @ 5V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
7 ns
Continuous Drain Current (ID)
1.8A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1104 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.054042
$0.054042
500
$0.039737
$19.8685
1000
$0.033114
$33.114
2000
$0.030380
$60.76
5000
$0.028392
$141.96
10000
$0.026412
$264.12
15000
$0.025543
$383.145
50000
$0.025117
$1255.85
FDN361AN Product Details
FDN361AN Description
FDN361AN is a 30v N-Channel, Logic Level MOSFET. This N-Channel Logic Level MOSFET FDN361AN is produced using Fairchild Semiconductor's Power Trench process that has been specially tailored to minimize the on-state resistance and yet maintain a low gate charge for superior switching performance.
