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MMFT960T1G

MMFT960T1G

MMFT960T1G

ON Semiconductor

MMFT960T1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

MMFT960T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingCut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.7Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating300mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
Number of Elements 1
Power Dissipation-Max 800mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation800mW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 65pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Tc
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 300mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.3A
Drain to Source Breakdown Voltage 60V
Nominal Vgs 1 V
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1817 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.713374$2.713374
10$2.559787$25.59787
100$2.414893$241.4893
500$2.278201$1139.1005
1000$2.149247$2149.247

MMFT960T1G Product Details

MMFT960T1G Description


MMFT960T1G is a 60v Small Signal N-Channel MOSFET. The Power MOSFET MMFT960T1G is designed for high speed, low loss power switching applications such as switching regulators, dc-dc converters, solenoid, and relay drivers. The onsemi MMFT960T1G is housed in the SOT-223 package which is designed for medium power surface mount applications.



MMFT960T1G Features


  • Silicon Gate for Fast Switching Speeds

  • Low Drive Requirement

  • The SOT?223 Package can be Soldered Using Wave or Reflow

  • The Formed Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die

  • Pb?Free Package is Available



MMFT960T1G Applications


  • Switching regulators

  • DC-DC converters

  • Solenoid

  • Relay drivers


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