Name: IRFB11N50APBF
Brand: Infineon Technologies
SKU: IRFB11N50APBF
Price: 2.63000 USD
Availability: InStock

new-10%

IRFB11N50APBF

Manufacturer part number:IRFB11N50APBF

Manufacturer:Infineon Technologies

Description:IRFB11N50APBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFB11N50APBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Series	HEXFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	11A
Power Dissipation-Max	170W Tc
Power Dissipation	170W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	52nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	11A
Drain to Source Breakdown Voltage	500V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFB11N50APBF Product Details

IRFB11N50APBF Description

IRFB11N50APBF is a type of HEXFET? power MOSFET provided by Infineon Technologies. It is able to provide improved gate, avalanche and dynamic dV/dt ruggedness, and fully characterized capacitance and avalanche voltage and current. Based on these characteristics, it is well suited for high-speed switching applications, synchronous rectification in SMPS, and uninterruptible power supplies.