Name: STW70N60M2
Brand: STMicroelectronics
SKU: STW70N60M2
Price: 13.54000 USD
Availability: InStock

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STW70N60M2

Manufacturer part number:STW70N60M2

Manufacturer:STMicroelectronics

Description:STW70N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW70N60M2 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	MDmesh™ II Plus
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Base Part Number	STW70N
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	450W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	450W
Turn On Delay Time	32 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 100V
Current - Continuous Drain (Id) @ 25°C	68A Tc
Gate Charge (Qg) (Max) @ Vgs	118nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	155 ns
Continuous Drain Current (ID)	68A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	272A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	9000 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW70N60M2 Product Details

STW70N60M2 Description

STW70N60M2 MOSFET is built on well-established silicon processes that supply designers with an array of devices. STW70N60M2 N-channel MOSFET comes in a variety of through-hole and surface mount packaging, with standard footprints, for easy design. Due to STMicroelectronics STW70N60M2 exhibits low on-resistance and optimized switching characteristics, it could be used for the most demanding high efficiency converters.