FDMS86200 Description
The N-channel MOSFET FDMS86200is manufactured using on Semiconductor's advanced POWERTRENCH process, which uses shielded gate technology. The process has been optimized for on-state resistors, but still maintains excellent switching performance.
FDMS86200 Features
? Shielded Gate MOSFET Technology
? Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A
? Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A
? Advanced Package and Silicon combination for low rDS(on) and high
efficiency
? MSL1 robust package design
? 100% UIL tested
? RoHS Compliant
FDMS86200 Applications
? DC?DC Conversion
