FDMS86103L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDMS86103L is -55??C~150??C TJ and its maximum power dissipation is 2.5W. In order to reduce the on-state resistance and still preserve exceptional switching performance, this N-Channel MOSFET is made using the cutting-edge Power Trench? technology.
FDMS86103L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 8 m|? at VGS = 10 V, ID = 12 A
Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 10 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86103L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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