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FDD7030BL

FDD7030BL

FDD7030BL

ON Semiconductor

FDD7030BL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDD7030BL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2003
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 2.8W Ta 60W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:20928 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.41000$0.41
500$0.4059$202.95
1000$0.4018$401.8
1500$0.3977$596.55
2000$0.3936$787.2
2500$0.3895$973.75

FDD7030BL Product Details

FDD7030BL Description


The FDD8880 is an N-channel MOSFET produced using the proprietary PowerTrench? process. The onsemi FDD8880 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDD8880 has been optimized for low gate charge, low RDS (ON), and fast switching speed.



FDD7030BL Features


  • 60 A, 30 V

  • RDS(ON) = 9 mΩ @ VGS = 10 V

  • RDS(ON) = 12 mΩ @ VGS = 4.5 V

  • Critical DC electrical parameters specified at elevated temperature

  • High-performance trench technology for extremely low RDS(ON)

  • 175°C maximum junction temperature rating



FDD7030BL Applications


  • Cellular phones

  • Laptop computers

  • Photovoltaic systems

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator

  • Motor Drives


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