FDD7030BL Description
The FDD8880 is an N-channel MOSFET produced using the proprietary PowerTrench? process. The onsemi FDD8880 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDD8880 has been optimized for low gate charge, low RDS (ON), and fast switching speed.
FDD7030BL Features
60 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
Critical DC electrical parameters specified at elevated temperature
High-performance trench technology for extremely low RDS(ON)
175°C maximum junction temperature rating
FDD7030BL Applications