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FDMS8460

FDMS8460

FDMS8460

ON Semiconductor

FDMS8460 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS8460 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 2.2MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-N5
Number of Elements 1
Voltage 40V
Power Dissipation-Max 2.5W Ta 104W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Turn On Delay Time19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7205pF @ 20V
Current - Continuous Drain (Id) @ 25°C 25A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time9ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 25A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 40V
Height 1.05mm
Length 5mm
Width 6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2773 items

Pricing & Ordering

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FDMS8460 Product Details

Description


The FDMS8460 is a MOSFET, N‐Channel, POWERTRENCH, 40 V, 49 A, 2.2 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH? technology from ON Semiconductor, which has been carefully designed to reduce the on-state resistance while maintaining exceptional switching performance.



Features


  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant

  • Max rDS(on) = 2.2 m at VGS = 10 V, ID = 25 A

  • Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 21.7 A

  • Advanced Package and Silicon combination for low rDS(on)



Applications


  • DC?DC conversion

  • Automotive electronics

  • As for switching devices in electronic control units

  • As power converters in modern electric vehicles

  • Inverter applications


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