FDMS7660 Description
This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low rDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.
FDMS7660 Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS7660 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
