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IRFB7530PBF

IRFB7530PBF

IRFB7530PBF

Infineon Technologies

IRFB7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB7530PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Series HEXFET®, StrongIRFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Turn On Delay Time52 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time141ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 104 ns
Turn-Off Delay Time 172 ns
Continuous Drain Current (ID) 195A
Threshold Voltage 3.7V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 760A
Avalanche Energy Rating (Eas) 1025 mJ
Height 16.51mm
Length 10.67mm
Width 4.83mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1689 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.61000$3.61
10$3.24500$32.45
100$2.69880$269.88
500$2.22526$1112.63

IRFB7530PBF Product Details

Description


The IRFB7530PBF is a single N-channel HEXFET? Power MOSFET with enhanced gate, avalanche, and dynamic dV/dt robustness. It can be used in battery-powered circuits, synchronous rectifier applications, O-ring and redundant power switches, as well as half-bridge and full-bridge topologies.



Features


● N-channel HEXFET? Power MOSFET

● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

● Fully Characterized Capacitance and Avalanche SOA

● Enhanced body diode dV/dt and dI/dt Capability

● Lead-Free, RoHS Compliant



Applications


● Synchronous rectifier applications

● Resonant mode power supplies

● OR-ing and redundant power switches

● DC/DC and AC/DC converters

● DC/AC Inverters

● Brushed Motor drive applications

● BLDC Motor drive applications

● Battery powered circuits

● Half-bridge and full-bridge topologies


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