FDMS3668S Description
The device includes two dedicated N-channel MOSFET in a dual PQFN package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. Control MOSFET (Q1) and synchronous SyncFET (Q2) are designed to provide optimal power efficiency.
FDMS3668S Features
Q1: N-Channel
Max rDS(on) = 8 m|? at VGS = 10 V, ID = 13 A
Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 11 A
Q2: N-Channel
Max rDS(on) = 5 m|? at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.2 m|? at VGS = 4.5 V, ID = 17 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing
RoHS Compliant
FDMS3668S Applications
Notebook PC
