Name: IRF7904PBF
Brand: Infineon Technologies
SKU: IRF7904PBF
Availability: InStock

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IRF7904PBF

Manufacturer part number:IRF7904PBF

Manufacturer:Infineon Technologies

Description:IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF7904PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	30V
Max Power Dissipation	2W
Current Rating	7.6A
Base Part Number	IRF7904PBF
Number of Elements	2
Element Configuration	Dual
Power Dissipation	2W
Power - Max	1.4W 2W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id	2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7.6A 11A
Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
Continuous Drain Current (ID)	11A
Threshold Voltage	2.25V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Recovery Time	17 ns
FET Feature	Logic Level Gate
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Exempt

IRF7904PBF Product Details

IRF7904PBF Description

HEXFET is trademark of power MOSFET developed by International Rectifier. As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.