Name: FDMC8200S
Brand: ON Semiconductor
SKU: FDMC8200S
Price: 1.28000 USD
Availability: InStock

new-10%

FDMC8200S

Manufacturer part number:FDMC8200S

Manufacturer:ON Semiconductor

Description:FDMC8200S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC8200S Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	186mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	20MOhm
Terminal Finish	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory	FET General Purpose Power
Max Power Dissipation	1W
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN SOURCE
Power - Max	700mW 1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 15V
Current - Continuous Drain (Id) @ 25°C	6A 8.5A
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	2.3 V
Feedback Cap-Max (Crss)	30 pF
Height	750μm
Length	3mm
Width	3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDMC8200S Product Details

FDMC8200S Description

This device comes in a due power33(3mm X 3mm MLP) packaging and features two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous MOSFET (Q2) have been constructed.