FDMS3600S Description
In a twin PQFN packaging, this device has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDMS3600S Features
Maximum RDS(on) at VGS = 10 V, ID = 30 A is 1.6 m.
At VGS = 4.5 V, ID = 25 A, the maximum RDS(on) is 2.4 m.
Reduced rise/fall periods due to reduced inductance packing reduce switching losses.
Optimal designing for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.
Conforms to RoHS
FDMS3600S Applications
Notebook PC
