FDMC86102L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMC86102L Datasheet PDF
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Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
ACTIVE (Last Updated: 13 hours ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
165.33333mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
24MOhm
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
41W
Case Connection
DRAIN
Turn On Delay Time
7.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1330pF @ 50V
Current - Continuous Drain (Id) @ 25°C
7A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Rise Time
2.2ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2.4 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
18A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
30A
Avalanche Energy Rating (Eas)
63 mJ
Height
750μm
Length
3.3mm
Width
3.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4820 items
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FDMC86102L Product Details
FDMC86102L Description
FDMC86102L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced PowerTrench? process that incorporates Shielded Gate Technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
FDMC86102L Features
Shielded Gate MOSFET Technology
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
Low Profile - 1 mm max in Power 33
RoHS Compliant
FDMC86102L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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