FQP7N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP7N80 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
6.6A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
167W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
167W
Turn On Delay Time
35 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.6A Tc
Gate Charge (Qg) (Max) @ Vgs
52nC @ 10V
Rise Time
80ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
95 ns
Continuous Drain Current (ID)
6.6A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
26.4A
Avalanche Energy Rating (Eas)
580 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3446 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.94000
$1.94
500
$1.9206
$960.3
1000
$1.9012
$1901.2
1500
$1.8818
$2822.7
2000
$1.8624
$3724.8
2500
$1.843
$4607.5
FQP7N80 Product Details
FQP7N80 Description
The FQP7N80 is an N-Channel enhancement mode power MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
