ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8
SOT-23
ZXMHC10A07N8TC Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
73.992255mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
870mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXMHC10A07
Pin Count
8
Number of Elements
4
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.36W
Turn On Delay Time
1.6 ns
FET Type
2 N and 2 P-Channel (H-Bridge)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
138pF @ 60V
Current - Continuous Drain (Id) @ 25°C
800mA 680mA
Gate Charge (Qg) (Max) @ Vgs
2.9nC @ 10V
Rise Time
2.1ns
Drain to Source Voltage (Vdss)
100V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
3.3 ns
Turn-Off Delay Time
5.9 ns
Continuous Drain Current (ID)
1A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
1A
Drain-source On Resistance-Max
0.7Ohm
Drain to Source Breakdown Voltage
-100V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Standard
Height
1.5mm
Length
5mm
Width
4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5369 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.754211
$0.754211
10
$0.711520
$7.1152
100
$0.671245
$67.1245
500
$0.633250
$316.625
1000
$0.597406
$597.406
ZXMHC10A07N8TC Product Details
Description:
The ZXMHC10A07N8TC Series is a dual N and P channel enhancement mode MOSFET from Diodes Inc. It is available in an SOIC-8 package and has a maximum drain-source voltage of 100 V and a maximum drain current of 1 A. It is designed for use in a wide range of applications, including power management, motor control, and switching.
Features:
• Dual N and P channel enhancement mode MOSFET • Maximum drain-source voltage of 100 V • Maximum drain current of 1 A • Available in an SOIC-8 package • Low on-resistance • Low gate charge • Low input capacitance • High speed switching • High power density • RoHS compliant
Applications:
The ZXMHC10A07N8TC Series is suitable for a wide range of applications, including: • Power management • Motor control • Switching • Automotive • Industrial • Consumer electronics • Telecommunications
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