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FDMC007N30D

FDMC007N30D

FDMC007N30D

ON Semiconductor

FDMC007N30D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDMC007N30D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Weight 186mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e4
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Tim[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N8
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 1.9W 2.5W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 15V 2360pF @ 15V
Current - Continuous Drain (Id) @ 25°C 46A
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 29A
Drain-source On Resistance-Max 0.0116Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 30 pF
RoHS StatusROHS3 Compliant
In-Stock:6660 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.228498$1.228498
10$1.158960$11.5896
100$1.093358$109.3358
500$1.031470$515.735
1000$0.973085$973.085

FDMC007N30D Product Details

FDMC007N30D Description


This device comes in a dual power33(3mm X 3mm MLP) packaging and has two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous MOSFET (Q2) have been constructed.



FDMC007N30D Features


  • At VGS = 10V, ID = 16 A, MAX rDS(on) = 6.4 m

  • Maximum rDS(on) is 7.0 m at 4.5 volts and 15 amps.

  • Conforms to RoHS



FDMC007N30D Applications


This product is all-purpose and appropriate for a wide range of uses.


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