IRF7904TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available on our website
SOT-23
IRF7904TRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
16.2MOhm
Subcategory
FET General Purpose Power
Max Power Dissipation
2W
Terminal Form
GULL WING
Base Part Number
IRF7904PBF
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Power - Max
1.4W 2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id
2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
910pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.6A 11A
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5894 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
IRF7904TRPBF Product Details
IRF7904TRPBF Description
International Rectifier's Fifth Generation HEXFETs use state-of-the-art manufacturing techniques to generate extremely low on-resistance per silicon area. The designe is provided with an extraordinarily efficient and reliable device for use in a variety of applications thanks to this feature as well as the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is ideal for a range of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. The use of a leadframe that was especially created allowed for this alteration. This innovation significantly reduces the amount of board space required while enabling the use of several devices. The package is meant to be used in conjunction with vapor phase infrared technology or wave soldering.
IRF7904TRPBF Features
RDS(on) is Very Low at 4.5V VGS.
Small Gate Fee
Comprehensive Characterization of Avalanche Voltage and Current
Max. Gate Rating for 20V VGS
improved reverse recovery of the body diode
Completely tested to be RG Lead-Free
IRF7904TRPBF Applications
POL dual SO-8 MOSFET
Converters for servers, notebook computers, and
Game consoles, graphics cards, and set-top boxes
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