FDMA7628 Description
On a customized MicroFET leadframe, Fairchild semiconductor's innovative Power Trench? technique was used to optimize the rDs(ON) @ VGs = 1.5 V. This technology aims to lower conduction loss, enhance switching performance, boost dv/dt rate, and boost avalanche energy. This product is intended for general use and can be used in a variety of situations.
FDMA7628 Features
At Vgs = 4.5 V, Id = 9.4 A, Maxds(o n) = 14.5 mQ.
At Vgs = 2.5 V, Id = 8.3 A, Maxds(o n) = 18.2 mQ.
At Vgs = 1.8 V, Id = 7.3 A, Maxds(o n) = 23.3 mQ.
At Vgs = 1.5 V, Id = 6.2 A, Maxds(o n) = 32.3 mQ.
Low Profile—maximum 0.8 mm in the new MicroFET 2x2 mm package RoHS Compliant
FDMA7628 Applications
Battery Pack (Li-lon)
Buck Converters (DC-DC)
