FDMA3028N Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA3028N Features
Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
FDMA3028N Applications
linear mode applications
