FDG6316P Description
Rohm N-channel and P-channel MOSFET have the characteristics of low on-resistance and high switching speed. It has a wide lineup from small signal MOSFET to power MOSFET and can be used in a variety of applications.
FDG6316P Features
? ?0.7 A, ?12 V
? RDS(ON) = 270 m @ VGS = ?4.5 V
? RDS(ON) = 360 m @ VGS = ?2.5 V
? RDS(ON) = 650 m @ VGS = ?1.8 V
? Low Gate Charge
? High Performance Trench Technology for Extremely Low RDS(ON)
? Compact Industry Standard SC70?6 Surface Mount Package
? These Devices are Pb?Free and are RoHS Compliant
FDG6316P Applications
? Battery Management
? Load Switch
