FDC6333C Description
The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.
FDC6333C Features
Q1 2.5 A, 30V
RDS(on) = 95 mΩ@ VGS = 10 V
RDS(on) = 150 mΩ @ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(on) = 150 mΩ@ VGS = -10 V
RDS(on) = 220 mΩ @ VGS = -4.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6333C Applications
Industrial
Power Management
DC/DC converter
Load switch
LCD display inverter
