FDG314P Description
FDG314P is a -25v P-Channel enhancement mode field-effect transistor. The transistor FDG314P is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is tailored to minimize on-state resistance at low gate drive conditions. This onsemi FDG314P is designed especially for battery power applications such as notebook computers and cellular phones.
FDG314P Features
RDS(ON) = 1.5 ? @ VGS = -2.7 V.
Very low gate drive requirements allow direct operation in a 3V circuit (VGS(th) <1.5 V).
Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
FDG314P Applications
Power Management
Load switch
Signal switch
Fan Motor Drives
Enterprise Copiers
Set-top Boxes
