IRFR1018ETRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFR1018ETRPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.4m Ω @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C
56A Tc
Gate Charge (Qg) (Max) @ Vgs
69nC @ 10V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
79mA
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
56A
Drain-source On Resistance-Max
0.0084Ohm
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
88 mJ
Height
2.3876mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:3631 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.89000
$1.89
500
$1.8711
$935.55
1000
$1.8522
$1852.2
1500
$1.8333
$2749.95
2000
$1.8144
$3628.8
2500
$1.7955
$4488.75
IRFR1018ETRPBF Product Details
IRFR1018ETRPBF Description
IRFR1018ETRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of IRFR1018ETRPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRFR1018ETRPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.
IRFR1018ETRPBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFR1018ETRPBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
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