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STB75NF20

STB75NF20

STB75NF20

STMicroelectronics

STB75NF20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB75NF20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-50°C~150°C TJ
PackagingTape & Reel (TR)
Series STripFET™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 34mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB75N
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 190W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation190W
Turn On Delay Time53 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 37A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 75A
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 205 mJ
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1364 items

Pricing & Ordering

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STB75NF20 Product Details

STB75NF20 Description


The STB75NF20 MOSFET family, which uses STMicroelectronics' unique STripFETTM process, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the primary switch in sophisticated isolated DC-DC converters with great efficiency.



STB75NF20 Features


  • Outstanding dv/dt capabilities

  • a low entry fee

  • Avalanche has been thoroughly tested.



STB75NF20 Applications


Switching applications


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