Name: FDD4141
Brand: ON Semiconductor
SKU: FDD4141
Price: 1.04000 USD
Availability: InStock

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FDD4141

Manufacturer part number:FDD4141

Manufacturer:ON Semiconductor

Description:FDD4141 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDD4141 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	12.3MOhm
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta 69W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.3m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2775pF @ 20V
Current - Continuous Drain (Id) @ 25°C	10.8A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	10.8A
Threshold Voltage	-1.8V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain to Source Breakdown Voltage	-40V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.8 V
Height	2.517mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDD4141 Product Details

FDD4141 Description

This P-Channel MOSFET has been produced using a proprietary PowerTrench? technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefits in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.