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FDD107AN06LA0

FDD107AN06LA0

FDD107AN06LA0

ON Semiconductor

MOSFET N-CH 60V 10.9A D-PAK

SOT-23

FDD107AN06LA0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252AA
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 91mOhm @ 10.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta 10.9A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
In-Stock:1917 items

About FDD107AN06LA0

The FDD107AN06LA0 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 10.9A D-PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FDD107AN06LA0, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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