Name: IRLML2502GTRPBF
Brand: Infineon Technologies
SKU: IRLML2502GTRPBF
Availability: InStock

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IRLML2502GTRPBF

Manufacturer part number:IRLML2502GTRPBF

Manufacturer:Infineon Technologies

Description:IRLML2502GTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLML2502GTRPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	45MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	1.25W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.2A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	4.2A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRLML2502GTRPBF Product Details

IRLML2502GTRPBF Description

IRLML2502GTRPBF is a kind of N-channel HEXFET? power MOSFETs designed based on advanced processing techniques to make extremely low on-resistance per silicon area possible. Moreover, IRLML2502GTRPBF is designed with the characteristics that HEXFET? power MOSFETs provide, including fast switching speed and ruggedized device design. All these make the device more efficient and reliable for battery and load management.