FDC6321C Description
These dual Numbp channel logic level enhanced mode field effect transistors are produced using OnSemi's proprietary high cell density DMOS technology. This very high-density process is specially tailored to minimize state resistance. The device is specially designed for low voltage applications as a substitute for digital transistors in load switch applications. Because there is no need for bias resistors, this dual digital FET can replace multiple digital transistors with different bias resistors.
FDC6321C Features
? N?Channel 0.68 A, 25 V
RDS(ON) = 0.45 @ VGS = 4.5 V
? P?Channel ?0.46 A, ?25 V
RDS(ON) = 1.1 @ VGS = ?4.5 V
? Very Low Level Gate Drive Requirements Allowing Direct
Operation in 3 V Circuits. VGS(th) < 1.0 V.
? Gate?Source Zener for ESD Ruggedness. >6 kV Human Body Model
? Replace Multiple Dual NPN & PNP Digital Transistors
? This is a Pb?Free Device
FDC6321C Applications
low voltage applications
